Sanan constructing mini/micro LED R&D base Siu Han, Taipei; Adam Hwang, DIGITIMES Tuesday 20 August 2019 0 Toggle Dropdown China-based LED epitaxial wafer and chip maker Sanan Optoelectronics is constructing a mini/micro LED R&D base in central China with investment of CNY12 billion (US$1.7 billion), according to industry sources.
The base, with total floor space of 477,700 square meters, will be used for R&D of GaN and GaAs mini/micro LED chips as well as 4K displays, the sources said.
Sanan plans to set up annual production capacities of 1.61 million GaN mini/micro LED chips, 750,000 GaAs mini/micro LED chips and 84,000 4K displays at the base, the sources noted. The GaN segment will consist of 720,000 blue-light mini LED chips, 90,000 blue-light micro LED chips, 720,000 green-light mini LED chips and 80,000 green-light micro LED chips, while the GaAs segment will consist of 660,000 red-light mini LED chips and 90,000 red-light micro LED chips, the sources indicated.
However, Sanan has not revealed when to start production of GaN and GaAs micro LED chips, implying uncertainties incurred to R&D of micro LED technology, the sources noted.
A Sanan's subsidiary maker has cooperated with Samsung Electronics to develop mini/micro LED technology, the sources said.
Taiwan-based PlayNitride plans to start trial production of up to 3,000 micro LED epitaxial wafers at the end of August 2019, the sources noted, adding Samsung has chosen PlayNitride as the exclusive supplier of micro LED epitaxial wafers.
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